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AO4912
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4912 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency
further. Standard Product AO4912 is Pb-free (meets
ROHS & Sony 259 specifications).
Features
Q1 Q2
V DS (V) = 30V V DS (V) = 30V
I D = 8.5A I D =7A (V GS = 10V)
R DS(ON) < 17mW <26mW (V GS = 10V)
R DS(ON) < 25mW <31mW (V GS = 4.5V)
SCHOTTKY
V DS (V) = 30V, I F = 3A, V F <0.5V@1A
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D1
D2
K
D2
1
2
3
4
8
7
6
5
G2
Q2
Q1
D2
D1/S2/K
G1
S1/A
D1/S2/K
A
D1/S2/K
G1
G2
S1
SOIC-8
S2
Absolute Maximum Ratings T A =25 C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
Max Q1
30
°20
8.5
Max Q2
Units
V DS
30
V
Gate-Source Voltage
V GS
°12
V
T A =25 C
T A =70 C
Continuous Drain
Current AF
7
I D
6.8
6.4
A
Pulsed Drain Current B
I DM
40
30
T A =25 C
T A =70 C
2
2
P D
W
Power Dissipation
1.28
1.28
Avalanche Current B
I AR
17
43
15
34
A
Repetitive avalanche energy 0.3mH B
E AR
mJ
Junction and Storage Temperature Range
T J , T STG
-55 to 150
-55 to 150
 C
Parameter
Reverse Voltage
Symbol
V DS
Maximum Schottky
Units
30
V
T A =25 C
3
Continuous Forward
Current AF
T A =70 C
I F
2.2
20
A
Pulsed Diode Forward Current B
I FM
T A =25 C
T A =70 C
2
P D
W
Power Dissipation A
1.28
-55 to 150
Junction and Storage Temperature Range
T J , T STG
 C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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AO4912
Parameter: Thermal Characteristics MOSFET Q1
Maximum Junction-to-Ambient A
Symbol
Typ
Max
Units
t ± 10s
48
74
62.5
R qJA
Maximum Junction-to-Ambient A
Steady-State
110
 C/W
Maximum Junction-to-Lead C
Steady-State
R qJL
35
40
Parameter: Thermal Characteristics MOSFET Q2
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
t ± 10s
48
62.5
R qJA
Maximum Junction-to-Ambient A
Steady-State
74
110
 C/W
Maximum Junction-to-Lead C
Steady-State
R qJL
35
40
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
t ± 10s
47.5
62.5
R qJA
Maximum Junction-to-Ambient A
Steady-State
71
32
110
 C/W
Maximum Junction-to-Lead C
Steady-State
R qJL
40
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A =25 C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R qJA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ± 10s junction to ambient thermal resistance rating.
Rev 6: Jan 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
876371967.533.png 876371967.534.png 876371967.535.png 876371967.536.png 876371967.537.png 876371967.538.png 876371967.539.png 876371967.540.png 876371967.542.png 876371967.543.png 876371967.544.png 876371967.545.png 876371967.546.png 876371967.547.png 876371967.548.png 876371967.549.png 876371967.550.png 876371967.551.png 876371967.553.png 876371967.554.png
AO4912
Q2 Electrical Characteristics (T J =25 C unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV DSS
I D =250mA, V GS =0V
30
V
V DS =30V, V GS =0V
1
I DSS
Zero Gate Voltage Drain Current
mA
T J =55 C
5
V DS =0V, V GS = °12V
I GSS
Gate-Body leakage current
100
nA
V DS =V GS I D =250mA
V GS(th)
Gate Threshold Voltage
1
1.5
2
V
I D(ON)
On state drain current
V GS =4.5V, V DS =5V
25
A
V GS =10V, I D =7.0A
20
26
mW
R DS(ON)
Static Drain-Source On-Resistance
T J =125 C
31.6
38
V GS =4.5V, I D =6.0A
24.3
31
mW
g FS
Forward Transconductance
V DS =5V, I D =7A
22
S
I S =1A
V SD
Diode Forward Voltage
0.78
1
V
I S
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
3
A
C iss
590
710
pF
V GS =0V, V DS =15V, f=1MHz
C oss
Output Capacitance
Reverse Transfer Capacitance
162
pF
C rss
40
56
pF
V GS =0V, V DS =0V, f=1MHz
R g
Gate resistance
0.2
0.45
0.6
W
SWITCHING PARAMETERS
Total Gate Charge
Q g
6.04
7.3
nC
V GS =4.5V, V DS =15V, I D =7.0A
Q gs
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
1.46
nC
Q gd
2.56
nC
t D(on)
3.7
5.5
ns
t r
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V GS =10V, V DS =15V, R L =2.2W,
R GEN =3W
3.5
5.5
ns
t D(off)
14.9
22
ns
t f
2.5
4
ns
t rr
Body Diode Reverse Recovery time
I F =7A, dI/dt=100A/ms
21.2
26
ns
Q rr
Body Diode Reverse Recovery charge I F =7A, dI/dt=100A/ms
14.2
21
nC
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A =25 C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R qJA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ± 10s junction to ambient thermal resistance rating.
Rev 6: Jan 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
876371967.555.png 876371967.556.png 876371967.557.png 876371967.558.png 876371967.559.png 876371967.560.png 876371967.561.png 876371967.562.png 876371967.002.png 876371967.003.png 876371967.004.png 876371967.005.png 876371967.006.png 876371967.007.png 876371967.008.png 876371967.009.png 876371967.010.png 876371967.011.png 876371967.013.png 876371967.014.png 876371967.015.png 876371967.016.png 876371967.017.png 876371967.018.png 876371967.019.png 876371967.020.png 876371967.021.png 876371967.022.png 876371967.024.png 876371967.025.png 876371967.026.png 876371967.027.png 876371967.028.png 876371967.029.png 876371967.030.png 876371967.031.png 876371967.032.png 876371967.033.png 876371967.035.png 876371967.036.png 876371967.037.png
AO4912
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10V
3.5V
25
V DS =5V
16
4.5V
3V
20
12
15
8
10
V GS =2.5V
125 C
25 C
4
5
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
V GS (Volts)
Figure 2: Transfer Characteristics
V DS (Volts)
Fig 1: On-Region Characteristics
30
1.8
28
I D =7A
1.6
V GS =4.5V
26
V GS =10V
V GS =4.5V
24
1.4
22
V GS =10V
1.2
20
18
1
16
0
5
10
15
20
0.8
I D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
50
100
150
200
Temperature ( C)
Figure 4: On resistance vs. Junction Temperature
70
1.0E+01
1.0E+00
60
I D =7A
125 C
1.0E-01
50
1.0E-02
40
125 C
1.0E-03
30
25 C
1.0E-04
20
25 C
1.0E-05
10
0.0
0.2
0.4
0.6
0.8
1.0
2
4
6
8
10
V SD (Volts)
Figure 6: Body-Diode Characteristics
V GS (Volts)
Figure 5: On resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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AO4912
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
750
5
V DS =15V
I D =7A
f=1MHz
V GS =0V
C iss
4
600
3
450
2
300
C oss
1
150
C rss
0
0
0
1
2
3
4
5
6
0
5
10
15
20
25
30
Q g (nC)
Figure 7: Gate-Charge Characteristics
V DS (Volts)
Figure 8: Capacitance Characteristics
100.0
40
T J(Max) =150 C, T A =25 C
T J(Max) =150 C
T A =25 C
R DS(ON)
limited
30
10ms
100ms
1ms
10.0
10ms
20
0.1s
1.0
10
1s
10s
DC
0
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
V DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T on /T
T J,PK =T A +P DM .Z qJA .R qJA
R qJA =62.5 C/W
1
0.1
P D
T on
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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