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Texas Instruments Incorporated
Data Acquisition
The IBIS model, Part 3: Using IBIS models
to investigate signal-integrity issues
By Bonnie C. Baker
Senior Applications Engineer
This article is the third of a three-part series on using a
digital input/output buffer information specification (IBIS)
simulation model during the development phase of a
printed circuit board (PCB). Part 1 discussed the funda-
mental elements of IBIS simulation models and how they
are generated in the SPICE environment. 1 Part 2 discussed
IBIS model validation. 2 The IBIS model brings a simple
solution to many of the signal-integrity problems that may
be encountered during the design phase. This article,
Part 3, shows how to use an IBIS model to extract impor-
tant variables for signal-integrity calculations and PCB
design solutions. Please note that the extracted values are
an integral part of the IBIS model.
Signal-integrity problems
When looking at a digital signal at both ends of a transmis-
sion line, the designer may be surprised at the result of
driving the signal into a PCB trace. Over relatively long
distances, electric signals act more like traveling waves
than instantaneous, changing signals. A good analogy that
describes electric-wave behavior on a circuit board is waves
in a pool. A ripple travels smoothly across the pool because
one volume of water has the same “impedance” as the next.
However, the pool wall presents a very different impedance
and reflects the wave in the opposite direction. Electric
signals injected into a PCB trace experience the same
phenomena, reflecting in a similar manner when imped-
ances are mismatched. Figure 1 shows a PCB setup with
mismatched termination impedances. A microcontroller,
Figure 1. PCB setup with mismatched termination impedances
MSP430 TM
ADS8326
T1
+
+
+
+
Clock
Clock
T2
+
+
+
+
CS
CS
T3
Data
Data
t CVC
CS/SHDN
Power Down
Sample
Conversion
t SVCS
DCLOCK
t CSD
Use positive clock edge for data transfer
High Impedance
High Impedance
0
B15 B14 B13 B12 B11 B10 B9 B8 B7 B6 B5 B4 B3 B2 B1 B0
D OUT
(MSB)
(LSB)
t CONV
t SMPL
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2Q 2011
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Data Acquisition
Texas Instruments Incorporated
the Texas Instruments (TI) MSP430™, transmits a clock
signal to the TI ADS8326 ADC, which sends the conver-
sion data back to the MSP430. Figure 2 shows the reflec-
tions created by the impedance mismatches in this setup.
These reflections cause signal-integrity problems on the
transmission lines. Matching the electrical impedance of
the PCB trace at one or both ends can reduce reflections
dramatically.
To tackle the issue of matching a system’s electrical
impedances, the designer needs to understand the imped-
ance characteristics of the integrated circuits (ICs) and
the PCB traces that function as a transmission line. Know-
ing these characteristics allows the designer to model the
connecting elements as distributed transmission lines.
Transmission lines service a variety of circuits, from
single-ended and differential-ended to open-drain output
devices, etc. This article focuses on a single-ended trans-
mission line where the driver has a totem-pole design.
Figure 3 shows the elements to use to design this example
transmission line.
The following IC pin specifications are also needed:
• Transmitter’s output resistance, Z T (W)
• Transmitter’s rise time, t Rise , and fall time, t Fall (seconds)
• Receiver’s input resistance, Z R (W)
• Receiver pin’s capacitive value, C R_Pin (F)
These specifications are usually not available in the IC
manufacturer’s product datasheets. As this article will
demonstrate, all of these values can be pulled from the
IC’s IBIS model in the process of designing the PCB and
using the model to simulate the PCB’s transmission lines.
Figure 2. Induced reflections from mismatched
termination impedances in Figure 1
Cross-
talk
Clock
Beyond
Supply
Voltage
Data
Beyond Ground
The transmission lines are defined with the following
parameters:
• Characteristic impedance, Z 0 (W)
• Propagation delay, D (ps/inch)
• Line propagation delay, t D (ps)
• Trace length, LENGTH (inches)
This list of variables can expand, depending on the PCB
design. For instance, a PCB design can have a backplane
with multiple transmission/receiver points. 3 All of the
transmission-line values depend on the particular PCB.
Typically, an FR-4 board’s Z 0 ranges from 50 to 75 W, and
D ranges from 140 to 180 ps/inch. The actual values of Z 0
and D depend on the actual transmission line’s material
Figure 3. Example single-ended transmission-line circuit
LENGTH
Transmitter
Receiver
Z t
0 , D
Z T
V T
V R
Z R
Output Impedance, Z T
Rise Time, t
Fall Time, t Rise
Fall
Characteristic Impedance, Z 0
Line Propagation Delay, t
Trace Length, LENGTH
PCB Construction:
Trace Inductance, L
Trace Capacitance, C
Input Impedance, Z R
D
TR
TR
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Texas Instruments Incorporated
Data Acquisition
and physical dimensions. 4 The line propagation delay on a
particular board is calculated as
Figure 4. Basic cross sections of microstrip
and stripline boards
t
= ×
D LENGTH.
(1)
D
Microstrip
Stripline
For FR-4 boards, a reasonable propagation delay for a
stripline (see Figure 4) is 178 ps/inch, with a characteristic
impedance of 50 W. This can be verified on the board by
measuring the line inductance and capacitance of the trace
and inserting those values into the following equations:
Conductor
Reference Plane
Dielectric
12
D 10
=
×
C
×
L
(2)
TR
TR
Reference Plane
Reference Plane
Conductor
or
(3)
D 85 ps/inch
=
×
e ,
r
corners of a device’s models are critical for creating an
accurate IBIS model. The silicon process varies from nomi-
nal to weak to strong models. The designer defines the
voltage settings from the component’s power-supply
requirements and varies them between nominal, minimum,
and maximum values. Finally, the temperature settings at
the component’s silicon junction are determined from the
component’s specified temperature range, the nominal
power dissipation, and the package’s junction-to-ambient
thermal resistance, or q JA .
Table 1 shows an example of the three PVT variables
and their relationships for a CMOS process with TI’s
ADS129x family of 24-bit biopotential-measurement ADCs.
These variables are used to perform the SPICE simulation
six times. The first and fourth simulations use the nominal
process models, the nominal power-supply voltage, and
the junction at room temperature. The second and fifth
simulations use the weak process models, a low power-
supply voltage, and a high junction temperature. The third
and sixth simulations use the strong process models, a
higher power-supply voltage, and a lower junction temper-
ature. The relationships between the PVT values map the
optimum corners for a CMOS process.
and
L
TR
Z
=
.
(4)
0
C
TR
C TR is the trace line capacitance in farads/inch; L TR is the
trace line inductance in henrys/inch; 85 ps/inch is the
dielectric constant for air; and e r is the material dielectric
constant. For instance, if the microstrip-board line capaci-
tance is 2.6 pF/inch, and the line inductance is 6.4 nH/inch,
then D = 129 ps/inch and Z 0 = 49.4 W.
Lumped versus distributed circuits
Once the transmission lines have been defined, the next
step is to determine whether the circuit layout represents
a lumped or a distributed system. Generally, a lumped
circuit is small, and a distributed circuit requires much
more space on the board. A small circuit is one that has an
effective length (LENGTH) that is smaller than the fastest
electrical feature in the signal. To qualify as a lumped sys-
tem, the circuit on the PCB must meet the following
requirement:
t
Rise
LENGTH
<
,
(5)
Table 1. PVT simulation corners for ADS1296 IBIS model
6
×
L
×
C
TR
TR
POWER-
SUPPLY
VOLTAGE
(V)
where t Rise is the rise time in seconds.
With a lumped-circuit implementation on the PCB, ter-
mination strategies become a non-issue. Fundamentally, it
is assumed that the driver signals transmitted into the
transmission lines arrive at the receiver instantaneously.
Data organization in an IBIS model
An IBIS model includes data for three, six, or nine corners,
depending on the IC’s power-supply voltage range. The
variables governing these corners are the silicon process, 1
the power-supply voltage, and the junction temperature.
The specific process/voltage/temperature (PVT) SPICE
CORNER
NUMBER
SILICON
PROCESS*
TEMPERATURE
(°C)
1
Nominal
1.8
27
2
Weak
1.65
85
3
Strong
2.0
–40
4
Nominal
3.3
27
5
Weak
3.0
85
6
Strong
3.6
–40
*The standard for TI’s IBIS models is nominal = typical, weak = minimum, and
strong = maximum.
7
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2Q 2011
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Data Acquisition
Texas Instruments Incorporated
Finding and/or calculating
transmitter specifications
The required transmitter speci-
fications for a signal-integrity
evaluation are the output
impedance (Z T ) and the rise
and fall times (t Rise and t Fall ,
respectively). Figure 5 shows
the package listing from the
IBIS model file, ads129x.ibs, 5
for TI’s ADS1296. The values
that are used to produce the
impedance are shown under the
“[Pin]” keyword and are also
within the buffer models (not
shown). The rise and fall times
are located in the transient por-
tions of the IBIS model’s data
listing.
Impedances of input and
output pins
The pin impedance of any
signal consists of the package
inductance and capacitance
added to the model’s imped-
ance. In Figure 5, the
keywords “[Component],”
“[Manufacturer],” and
“[Package]” describe a specific
package, a 64-pin PBGA (ZXG).
The package inductance and
capacitance for specific pins
can be found under the “[Pin]”
keyword. For instance, at pin
5E for the signal GPIO4, the
L_pin and C_pin values are
given. The L_pin (pin induc-
tance) and C_pin (pin capaci-
tance) values for this signal and
package are 1.4891 nH and
0.28001 pF, inclusive.
The second capacitance value
of interest is the silicon capaci-
tance, C_comp. The C_comp
values can be found under the
“[Model]” keyword in the model
DIO_33 listing from the
ads129x.ibs file (see Figure 6).
C_comp in this model is the
capacitance of the DIO buffer
with 3.3 V applied to the power-
supply pin. The “|” symbol indi-
cates a comment; so the active C_comp values in this list-
ing are 3.0727220e-12 F (typical), 2.3187130e-12 F (mini-
mum), and 3.8529520e-12 F (maximum), from which the
Figure 5. IBIS model’s package listing for ADS1296, including L_pin
and C_pin values
ads1296zxg :: PBGA, 64 pin package
[Component] ads1296zxg
[Manufacturer] TI
|
[Package] |ZXG (PBGA) - 64 pin
| variable typ min max
R_pkg 0.084959 0.084959 0.084959
L_pkg 1.726943nH 1.173300nH 2.802300nH
C_pkg 0.203317pF 0.155540pF 0.299270pF
|
[Pin] signal_name model_name R_pin L_pin C_pin
|
1A IN8P TERM 0.080388 1.4891nH 0.16542pF
1B IN7P TERM 0.078742 1.4385nH 0.15797pF
1C IN6P TERM 0.077541 1.4231nH 0.16358pF
5E GPIO4 DIO 0.106300 2.5339nH 0.28001pF
Figure 6. Model DIO_33 listing of C_comp values from ads129x.ibs file
[Model] DIO_33
Model_type I/O
|Signals SCLK, DAISY_IN
|
Vinl = 0.66
Vinh = 2.64
Vmeas = 1.65
Vref = 1.65
Cref = 15pF
Rref = 50
|
| typ min max
| (nom PVT) (fast PVT) (slow PVT)
|
C_comp 3.0727220e-12
2.3187130e-12 3.8529520e-12
|C_comp (ON state) 5.2856500e-12
4.3183460e-12 6.0694320e-12
|C_comp (OFF state) 6.2160260e-12
5.1916700e-12 7.4675830e-12
|
|
| Where nom PVT is Nominal Process, 3.3V, 27C
| Fast PVT is Strong Process, 3.6V, -40C
| Slow PVT is Weak Process, 3V, 85C
PCB designer can choose. During the design stage of the
PCB transmission lines, the typical value of 3.072722 pF is
an appropriate choice.
8
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Texas Instruments Incorporated
Data Acquisition
Figure 7. Termination-correction strategy
MSP430 TM
ADS8326
T1
R1 100
+
+
Clock
+
+
R4 100
Clock
C1 220 pF
T2
R2 100
+
+
CS
+
+
R5 100
CS
C2 220 pF
T3
R3 100
+
+
+
+
Data
R6 100
Data
C3 220 pF
The input and output impedances can be critical to
signal transmission. The following equation defines the
characteristic impedance of the IBIS model pins:
value for t Rise for the various transmission-line calculations
such as f Knee , f 3dB , and rising-edge lengths.
Using IBIS to design transmission lines
This article started out by discussing a PCB with mis-
matched termination impedances. The IBIS model was
then used to understand and find the critical elements for
this transmission problem. At this point, it is only fair to
show that there is a solution to this problem. Figure 7
shows the termination-correction strategy, and Figure 8
shows the corrected waveforms.
L
pin
Z
=
Z
=
(6)
T
R
C_ pin C_ comp
+
Output rise and fall times
Across the industry, the convention for rise- and fall-time
specifications is to use the time needed for the output
signal to swing between 10% and 90% of the rail-to-rail
signal, which is usually 0 to DV DD . The IBIS Open Forum’s
definition for rise time is the same and was adopted
because of the long tails on CMOS switching waveforms.
Output, I/O, and three-state models within the IBIS
model have specifications embedded under the “[Ramp]”
keyword for R_load (test load), dV/dt_r (rise time), and
dV/dt_f (fall time). The range of the rise- and fall-time
data is from 20 to 80% of the voltage-output signal. If the
denominator of the typical dV/dt_r values is multiplied
by 0.8/0.6, the rise-time value will change from a 20-to-
80% swing to a 10-to-90% swing. Please note that the
data represents a buffer with the resistive load, R_load.
In the ads129x.ibs file, DIO_33 data assumes a 50-W
load, so the data does not extend to DV DD . The resulting
number from this calculation will provide an appropriate
Figure 8. Stable signals from termination correction
Channel 1 Clock
Channel 2 Data
9
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