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NTMFS4744N
Power MOSFET
30 V, 53 A, Single N−Channel, SO−8 FL
Features
•
Low RDS(on) to Minimize Conduction Losses
•
Low Capacitance to Minimize Driver Losses
http://onsemi.com
•
Optimized Gate Charge to Minimize Switching Losses
•
These are Pb−Free Devices
V
(BR)DSS
R
DS(on)
MAX
I
D
MAX
Applications
•
10 m
@ 10 V
CPU Power Delivery
30 V
53 A
•
14 m @ 4.5 V
DC−DC Converters
•
Low Side Switching
N−Channel
D
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
V
DSS
30
V
Gate−to−Source Voltage
V
GS
20
V
G
T
A
= 25
°
C
11
Continuous Drain
Current R
JA
(Note
1
)
I
D
A
T
A
= 85
°
C
8.0
S
Power Dissipation
R
JA
(Note
1
)
T
A
= 25
°
C
P
D
2.2
W
Continuous Drain
Current R
JA
(Note
2
)
T
A
= 25
°
C
ID
7.0
A
MARKING
DIAGRAM
T
A
= 85
C
5.0
Steady
State
°
D
Power Dissipation
R
JA
(Note
2
)
T
A
= 25
°
C
P
D
0.88
W
S
S
S
G
D
1
4744N
AYWW
Continuous Drain
Current R
JC
(Note
1
)
T
C
= 25
°
C
I
D
53
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
T
C
= 85
°
C
38
D
D
Power Dissipation
R
JC
(Note
1
)
T
C
= 25
°
C
P
D
47.2
W
4744N = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Pulsed Drain
Current
t
p
=10s
T
A
= 25
°
C
I
DM
106
A
Operating Junction and Storage Temperature
T
J
, T
STG
−55 to
+150
°
C
Source Current (Body Diode)
I
S
46
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V,
I
L
= 24 A
pk
, L = 1.0 mH, R
G
= 25
EAS
286
mJ
ORDERING INFORMATION
Shipping
†
Device
Package
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
NTMFS4744NT1G
SO−8 FL
(Pb−Free)
1500 Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NTMFS4744NT3G
SO−8 FL
(Pb−Free)
5000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Publication Order Number:
NTMFS4744N/D
©
Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. 3
NTMFS4744N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain)
R
JC
2.65
Junction−to−Ambient – Steady State (Note
1
)
56.9
R
JA
°
C/W
Junction−to−Ambient – Steady State (Note
2
)
R
JA
142.4
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
10
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°
C
1.0
A
T
J
= 125
C
10
°
Gate−to−Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
= 20 V
100
nA
ON CHARACTERISTICS
(Note
3
)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.5
2.5
V
Negative Threshold Temperature Coefficient
V
GS(TH)
/T
J
5.0
mV/
°
C
Drain−to−Source On Resistance
R
DS(on)
V
GS
= 10 V to
11.5 V
I
D
= 30 A
7.6
I
D
= 15 A
7.3
I
D
= 10 A
7.3
10
m
V
GS
= 4.5 V
I
D
= 30 A
10.4
I
D
= 15 A
10.1
I
D
= 10 A
9.9
14
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
= 15 A
25
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
1300
Output Capacitance
C
OSS
550
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
pF
Reverse Transfer Capacitance
C
RSS
132
Total Gate Charge
Q
G(TOT)
10
17
Threshold Gate Charge
Q
G(TH)
0.9
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
nC
Gate−to−Source Charge
Q
GS
1.8
Gate−to−Drain Charge
Q
GD
5.9
Total Gate Charge
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V;
I
D
= 30 A
25
37
nC
SWITCHING CHARACTERISTICS
(Note
4
)
Turn−On Delay Time
t
d(ON)
12
Rise Time
t
r
203
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 30 A,
R
G
= 3.0
ns
Turn−Off Delay Time
t
d(OFF)
14
Fall Time
t
f
83
3
. Pulse Test: pulse width
2%.
4
. Switching characteristics are independent of operating junction temperatures.
300
s, duty cycle
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2
NTMFS4744N
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
(Note
4
)
Turn−On Delay Time
t
d(ON)
7.0
Rise Time
t
r
94
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A, R
G
= 3.0
ns
Turn−Off Delay Time
t
d(OFF)
23
Fall Time
t
f
4.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T
J
= 25
°
C
0.78
1.2
V
GS
= 0 V,
I
S
= 30 A
V
T
J
= 125
°
C
0.7
Reverse Recovery Time
t
RR
37
60
Charge Time
t
a
21
ns
V
GS
= 0 V, dI
S
/dt = 100 A/s,
I
S
= 30 A
Discharge Time
t
b
17
Reverse Recovery Charge
Q
RR
37
nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
0.65
nH
Drain Inductance
L
D
0.005
T
A
= 25
°
C
Gate Inductance
L
G
1.84
Gate Resistance
R
G
2.0
5.0
3. Pulse Test: pulse width
2%.
4. Switching characteristics are independent of operating junction temperatures.
300
s, duty cycle
http://onsemi.com
3
NTMFS4744N
TYPICAL PERFORMANCE CURVES
32
32
T
J
= 25
°
C
10 V
4.5 V
3.5 V
24
24
3 V
16
16
2.8 V
T
J
= 125
°
C
8
8
T
J
= 25
C
°
2.6 V
T
J
= −55
°
C
2.4 V
0
0
0
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
3
4
5
0
1
2
3
4
5
6
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.1
0.020
V
GS
= 10 V
I
D
= 30 A
0.08
0.016
T
J
= 125
°
C
0.012
0.06
T
J
= 25
°
C
0.04
0.008
0.02
0.004
T
J
= −55
°
C
0
0
2.6
3
3.4
3.8
4.2
4.6
5
0
5
10
15
20
25
30
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Temperature
1000
1.8
I
D
= 9 A
V
GS
= 10 V
1.6
T
J
= 125
°
C
100
1.4
T
J
= 85
°
C
10
1.2
1.0
T
J
= 25
°
C
1
0.8
0.1
0.6
−50
−25
0
25
50
75
100
125
150
0
6
12
18
24
30
T
J
, JUNCTION TEMPERATURE (
C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
°
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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4
NTMFS4744N
TYPICAL PERFORMANCE CURVES
2000
5
Q
T
T
J
= 25
°
C
V
GS
= 0 V
4
1600
Q
GS
Q
GD
C
iss
1200
3
C
oss
800
2
400
1
I
D
= 30 A
T
J
= 25
C
rss
°
C
0
0
0
4
8
12
16
20
0
4
8
12
Q
G
, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
Figure 7. Capacitance Variation
1000
10
V
GS
= 0 V
t
r
100
t
f
T
J
= 150
°
C
T
J
= 25
°
C
1
t
d(off)
t
d(on)
10
V
DS
= 15 V
I
D
= 30 A
V
GS
= 4.5 V
1
0.1
0.2
1
10
100
0.4
0.6
0.8
R
G
, GATE RESISTANCE (OHMS)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
300
V
GS
= 2.0 V
SINGLE PULSE
T
C
= 25
°
C
I
D
= 24 A
100
10 s
100 s
1 ms
10 ms
200
10
1
100
0.1
RDS(on) LIMIT
Thermal Limit
Package Limit
dc
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
T
J
, JUNCTION TEMPERATURE (
C)
°
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
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